The structural and optical properties of high-Al-content AlInGaN epilayers grown by RF-MBE

AlInGaN Quaternary Alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Different Al content AlInGaN quaternary alloys were acquired by changing the Al cell's temperature. The streaky RHEED pattern observed during AlInGaN growth showed the layer-by-layer growth mode. Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN with appropriate Al cell's temperature, could acquire Al/In ratio near 4.7, then could acquire better crystal and optical quality. The samllest X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectivly. There are some cracks and V-defects occur in high-Al/In-ratio AlInGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions. The emission enhancement of the cracked and V-defect regions may be related to the In-segregation.

[1]  Sven Einfeldt,et al.  Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy , 1999 .

[2]  Salah M. Bedair,et al.  High optical quality AlInGaN by metalorganic chemical vapor deposition , 1999 .

[3]  Michael S. Shur,et al.  Optical bandgap formation in AlInGaN alloys , 2000 .

[4]  Michael S. Shur,et al.  Lattice and energy band engineering in AlInGaN/GaN heterostructures , 2000 .

[5]  Takashi Mukai,et al.  Characteristics of InGaN laser diodes in the pure blue region , 2001 .

[6]  Lei Deng,et al.  Characterizing LEDs for general illumination applications: mixed-color and phosphor-based white sources , 2001, SPIE Optics + Photonics.

[7]  M. Shur,et al.  Band-edge luminescence in quaternary AlInGaN light-emitting diodes , 2001 .

[8]  Ana Cremades,et al.  Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films , 2001 .

[9]  M. Shur,et al.  Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells , 2001 .

[10]  Tao Wang,et al.  1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate , 2002 .

[11]  Manijeh Razeghi,et al.  Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire , 2002 .

[12]  M. Asif Khan,et al.  Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes , 2003 .

[13]  K. H. Kim,et al.  III-nitride ultraviolet light-emitting diodes with delta doping , 2003 .

[14]  Satoshi Kurai,et al.  Growth of homoepitaxial III‐nitride layers on bulk GaN single crystals by molecular‐beam epitaxy , 2003 .

[15]  Liu Xinyu,et al.  Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy , 2004 .

[16]  M. Asif Khan,et al.  High-efficiency 269 nm emission deep ultraviolet light-emitting diodes , 2004 .

[17]  Ana Cremades,et al.  Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy , 2004 .

[18]  Shiro Sakai,et al.  Fabrication of high-performance 370 nm ultraviolet light-emitting diodes , 2004 .

[19]  Hiroyasu Ishikawa,et al.  Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition , 2004 .

[20]  Hideki Hirayama,et al.  Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes , 2005 .

[21]  Shude Yao,et al.  Chemical composition and elastic strain in AlInGaN quaternary films , 2006 .