Large area amorphous silicon photodiode arrays for radiotherapy and diagnostic imaging

Abstract Amorphous silicon imaging devices consisting of two-dimensional pixel arrays of photodiodes and field effect transistors can now be fabricated over areas as large as 30 cm by 30 cm. Such imagers can offer considerable advantages for real-time radiotherapy megavoltage and diagnostic X-ray imaging applications. The design, operation, and advantages of such imagers are discussed, and sensor signal data are presented.

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