Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography

[1]  M. Dudley,et al.  Microstructure Analysis of GaN Epitaxial Layers During Ion Implantation Using Synchrotron X-Ray Topography , 2021, ECS Transactions.

[2]  A. Allerman,et al.  Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates , 2020 .

[3]  T. Anderson,et al.  p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing , 2020 .

[4]  A. Allerman,et al.  X-ray topography characterization of gallium nitride substrates for power device development , 2020, Journal of Crystal Growth.

[5]  M. Dudley,et al.  Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography , 2018, Journal of Electronic Materials.

[6]  Takao Nakamura,et al.  GaN Substrate Technologies for Optical Devices , 2013, Proceedings of the IEEE.

[7]  A. Puchalski,et al.  Bulk ammonothermal GaN , 2009 .

[8]  Y. Chu,et al.  Strain mapping with parts-per-million resolution in synthetic type-Ib diamond plates , 2005 .

[9]  X. Chen.  Growth of bulk GaN single crystals by flux method , 2005 .

[10]  Joan M. Redwing,et al.  CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN , 1998 .

[11]  Robert F. Karlicek,et al.  Inductively coupled plasma etching of GaN , 1996 .

[12]  S. Stock,et al.  The measurement of strain fields by X-ray topographic contour mapping , 1986 .

[13]  J. J. Tietjen,et al.  THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .