The recent advances of research on p-type ZnO thin film

ZnO is a direct wide-band gap (3.37 eV) compound semiconductor with large exciton binding energy (60 meV) at room temperature. Therefore it has a strong potential for various short-wavelength optoelectronic device, and now attracts tremendous renew interests for developing highly efficient ZnO-based optoelectronic devices. While high quality ZnO p–n junction materials obtained is the key step of its optoelectronic application. Whereas ZnO thin film is naturally only n-type conductivity due to a large number of native defects, such as oxygen vacancies and zinc interstitials, which lead to difficulty in achieving p-type ZnO thin film. Therefore the fabrication of p-type ZnO thin film has been a key and hotspot of the research on ZnO. This article summarizes the recent advances of the studies on p-type ZnO thin film and the correlative several important breakthroughs in ZnO homo-junction devices based on succeeding on fabrication of p-type ZnO film. Although the achievement obtained as summarized, there is also a long way from the real application of ZnO-based optoelectronic device. We here also discuss the problem and relevant possible solution for the fabrication of p-type ZnO film and its optoelectronic application. And forecast the preparation trends of p-type ZnO thin film.

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