论文信息 - 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs - 字舞流文

0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs

T. Hashizume | S. Kasai | S. Uno | Hideki Hasegawa Hideki Hasegawa | Nan-Jian Wu Nan-Jian Wu