Thermal oxidation of porous silicon: Study on structure

The structural changes of porous silicon (PS) samples during oxidation are investigated and analyzed using various microscopy techniques and x-ray diffraction. It is found that the surface roughness of oxidized PS layers increases with the oxidation at 200–400°C and decreased at 600–800°C. At 800°C a partially fused surface is observed. The oxide formed on the wall of porous silicon skeleton is amorphous. The shifts of Si(400) peaks are observed in the x-ray diffraction patterns, which are correlated to the lattice deformation induced by thermal expansion coefficient mismatch between the grown SiO2 and the residual Si, and to the intrinsic stress caused by the Si–O bonds at the Si–SiO2 interface. These explanations are supported by thermomechanical modeling using three-dimensional finite element method.

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