Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides

The origin of the FN-induced substrate hole current is re-investigated in more detail. It is unambiguously demonstrated that not the anode hole injection, but the generation of electron-hole pairs in the substrate by FN-induced photons in the gate is the dominant source of the substrate hole current in thin oxides, Consequently, the generally accepted explanation of oxide degradation based on the anode hole explanation of the substrate current by the anode hole injection model has to be revised.

[1]  A. Ghetti,et al.  An anode hole injection percolation model for oxide breakdown-the "doom's day" scenario revisited , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[2]  Piyas Samanta,et al.  Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress , 1999 .

[3]  S. V. Gastev,et al.  Al/SiO 2 (2.0-2.5 nm)/ p -Si tunnel junction as a light emitter , 1999 .

[4]  P.J. Silverman,et al.  Explanation of stress-induced damage in thin oxides , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[5]  E. Cartier,et al.  Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides , 1998 .

[6]  R. Degraeve,et al.  A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown , 1998 .

[7]  Gilles Reimbold,et al.  Light emission microscopy for thin oxide reliability analysis , 1997 .

[8]  E. Cartier,et al.  Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions , 1997 .

[9]  Guido Groeseneken,et al.  A simple, cost effective and very sensitive alternative for photon emission spectroscopy , 1997 .

[10]  Eduard A. Cartier,et al.  Anode hole injection and trapping in silicon dioxide , 1996 .

[11]  Makoto Hirayama,et al.  Model for the substrate hole current based on thermionic hole emission from the anode during Fowler–Nordheim electron tunneling in n‐channel metal‐oxide‐semiconductor field‐effect transistors , 1995 .

[12]  J. Kolzer,et al.  Fundamentals of light emission from silicon devices , 1994 .

[13]  Arnold,et al.  Theory of high-field electron transport and impact ionization in silicon dioxide. , 1994, Physical review. B, Condensed matter.

[14]  C. Hu,et al.  Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation , 1994 .

[15]  Tetsuo Endoh,et al.  Modeling of the Hole Current Caused by Fowler-Nordheim Tunneling through Thin Oxides , 1994 .

[16]  A. Toriumi,et al.  Substrate hole current generation and oxide breakdown in Si MOSFETs under Fowler-Nordheim electron tunneling injection , 1993, Proceedings of IEEE International Electron Devices Meeting.

[17]  W. Chen,et al.  Spectral Analysis of Electroluminescence from SiO2 under Fowler‐Nordheim Tunneling Conditions , 1993 .

[18]  W. Weber,et al.  Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2 layers using homogeneous nonavalanche injection of holes , 1990 .

[19]  Chenming Hu,et al.  Substrate hole current and oxide breakdown , 1986 .

[20]  Massimo V. Fischetti,et al.  SiO2‐induced substrate current and its relation to positive charge in field‐effect transistors , 1986 .

[21]  Fischetti.  Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode. , 1985, Physical review. B, Condensed matter.

[22]  S. Nakajima,et al.  Emission mechanism and bias-dependent emission efficiency of photons induced by drain avalanche in Si MOSFET's , 1985, IEEE Transactions on Electron Devices.

[23]  Robert W. Brodersen,et al.  Quantum yield of electron impact ionization in silicon , 1985 .

[24]  M. Fischetti,et al.  Investigation of the SiO2‐induced substrate current in silicon field‐effect transistors , 1985 .

[25]  Chenming Hu,et al.  Electrical breakdown in thin gate and tunneling oxides , 1985, IEEE Transactions on Electron Devices.

[26]  Chenming Hu,et al.  Hot-electron-induced photon and photocarrier generation in Silicon MOSFET's , 1984, IEEE Transactions on Electron Devices.