GaN HEMTs with pre-match for Ka-band with 18W

AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed with an achievable fmax of 138GHz. A 6.4mm gate periphery device was thereafter designed with pre-match circuits on the die and matching circuits on an alumina substrate at Ka-band. A saturated output power of 18.5W was achieved at 31GHz which to the best of our knowledge is the highest ever reported at Ka-band.

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