Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures

Abstract The set of material parameters for quantum well structures is of immense importance because of its usage in the development of theories, extraction of experimental data, and the proper design of devices. In particular, the (Al,In)GaAs/GaAs, InGaAs/InP and (In,Ga)AlAs/InGaAs quantum well systems have drawn a lot of attention. They form the center core of materials used for fundamental basic research and device applications. Despite the presence of some review articles and reference books, there is a lack of clear reference on the accurate determination of the material parameters for quantum wells. This review aims to provide a comprehensive and systematic set of material parameters for the above quantum well systems grown on (1 0 0) substrates at two different temperatures, below 10 K and at around 300 K. The parameters are compared against experimental data from various fabrication sources, measurement techniques, and quantum well structures. The values presented here serve as an accurate and up to date source of reference.

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