Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

In this work, a TiN/HfO2/ITO memory device is fabricated, which shows stable bipolar resistive switching behavior, as well as excellent data retention and good endurance. Moreover, a very low SET voltage of 0.2 V is achieved with a self-compliance current effect. The result brings about an obvious reduction in SET power to 160 µW, which is crucial for future high-density resistive switching memories. On the basis of the conducting filament theory, a possible resistive mechanism is discussed to explain the low SET voltage and self-compliance current phenomenon.

[1]  Jong Yeog Son,et al.  Direct observation of conducting filaments on resistive switching of NiO thin films , 2008 .

[2]  Qi Liu,et al.  Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM , 2012, Advanced materials.

[3]  Chun-Hu Cheng,et al.  Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance , 2011, Advanced materials.

[4]  C. Guillén,et al.  Influence of oxygen in the deposition and annealing atmosphere on the characteristics of ITO thin films prepared by sputtering at room temperature , 2006 .

[5]  Wei Hu,et al.  Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances. , 2012, Journal of the American Chemical Society.

[6]  Shimeng Yu,et al.  Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory , 2011 .

[7]  Jung Won Seo,et al.  Transparent resistive random access memory and its characteristics for nonvolatile resistive switching , 2008 .

[8]  S. Ha,et al.  Adaptive oxide electronics: A review , 2011 .

[9]  Fei Zeng,et al.  Resistive switching induced by metallic filaments formation through poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate). , 2012, ACS applied materials & interfaces.

[10]  J. Tour,et al.  Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene , 2012, Nature Communications.

[11]  Ru Huang,et al.  Record Low-Power Organic RRAM With Sub-20-nA Reset Current , 2013, IEEE Electron Device Letters.

[12]  W. J. Liu,et al.  Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices , 2010, IEEE Electron Device Letters.

[13]  Heng-Yuan Lee,et al.  A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability , 2011, 2011 IEEE International Solid-State Circuits Conference.

[14]  Fei Zeng,et al.  Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO , 2012, Advanced materials.

[15]  Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation , 2013 .

[16]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[17]  Xin Peng Wang,et al.  Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells , 2009, IEEE Transactions on Electron Devices.

[18]  Shimeng Yu,et al.  A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory , 2012 .

[19]  H. Wong,et al.  $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current , 2010, IEEE Electron Device Letters.

[20]  Ming-Jinn Tsai,et al.  Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films , 2010 .

[21]  T. Hou,et al.  Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory , 2011 .

[22]  S. Kim,et al.  Analysis on switching mechanism of graphene oxide resistive memory device , 2011 .

[23]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.