Comparability of redox reactions at n- and p-type semiconductor electrodes. 2. Electrochemical overpotential and recombination in view of the quasi-Fermi level concept

In the present paper, majority carrier processes at p-type semiconductor electrodes and corresponding reaction mechanisms have been studied using classical electrochemical methods. Taking the Cu + /Cu 2+ redox system as an example, the corresponding current-potential curves obtained with p-type GaAs electrodes have been analyzed in detail. It is shown that the kinetics of the oxidation and reduction process are very fast, and the currents are entirely diffusion controlled