论文信息 - Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates - 字舞流文

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

C. Kang | Jungwoo Oh | P. Majhi | R. Jammy | H. Tseng | S. Banerjee | Ji-Woon Yang | H. Lee | R. Harris | Oooksang Yoo