论文信息 - Donor spectroscopy in GaAs

Donor spectroscopy in GaAs

Abstract The far i.r. absorption and photoconductivity spectra of high purity n-type epitaxial GaAs has been measured. These spectra are interpreted on the basis of a shallow donor whose ionization energy is approximately 0.0046 eV.

R. E. Enstrom | R. S. Crandall | D. R. Bosomworth | R. Crandall | R. Enstrom

[1] D. J. Oliver. Electrical Properties of n -Type Gallium Arsenide , 1962 .

[2] R. Reynolds. Impact ionization breakdown of n-type epitaxial GaAs at liquid helium temperatures , 1968 .

[3] J. Basinski,et al. IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE , 1967 .

[4] E. Putley. Far Infra-Red Photoconductivity , 1964, September 1.

[5] S. Blum,et al. On the Preparation of High Purity Gallium Arsenide , 1962 .