论文信息 - The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer - 字舞流文

The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

Z. Liu | Hui Yang | Dongshan Zhao | D. Jiang | Juye Zhu | J. W. Liang | Juntao Zhu | S. Zhang | S. Zhang | J. W. Liang | Debo Zhao