论文信息 - Hydrogen plasma etching mechanism at the a-C:H/a-SiCx:H interface: A key factor for a-C:H adhesion - 字舞流文

Hydrogen plasma etching mechanism at the a-C:H/a-SiCx:H interface: A key factor for a-C:H adhesion

C. Figueroa | C. D. Boeira | L. M. Leidens | Fernando G. Echeverrigaray | Â. Crespi