Computer modeling of carrier transport in (Hg,Cd)Te photodiodes

A numerical technique has been used to solve the carrier transport equations for several (Hg,Cd)Te photodiode configurations, namely n+pp+, n+np, and pin. Of particular interest are the fundamental recombination mechanisms of radiative and Auger. Results clearly demonstrate the importance of Auger type 1 and 7 mechanisms on the n and p sides of the junction, respectively, in limiting carrier lifetimes. For example, it was found that for defect‐free Hg1−xCdxTe alloys with x=0.2 and hole concentration less than 4×1014 cm−3 adjacent to the depletion region, the Auger recombination rate can be reduced below the radiative rate. An analysis of the spatial dependence of the electron mobility shows that the presence of high carrier concentrations and electric field strengths can reduce the mobility and consequently have an effect on the sensitivity and temporal response of the photodiode.

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