Circuit simulation models for the high electron mobility transistor

A three-terminal model is formulated for the high electron mobility transistor (HEMT) using charge-voltage relationships derived from the Boltzmann transport. Emphasis is placed on modeling the current transport of the two-dimensional electron gas (TEG) and the capacitance of the embedded parasitic MESFET structure. Furthermore, a distributed circuit topology is used to better model high-frequency effects, such as the transit time delay, in both small-signal and large-signal-transient analysis. The HEMT model is implemented in the circuit simulation program HP-SPICE. Both dc and ac simulation results are discussed.

[1]  P. N. Butcher,et al.  Calculation of the velocity-field characteristic for gallium arsenide , 1966 .

[2]  G. S. Kino,et al.  Transport Properties of GaAs , 1968 .

[3]  H. Morkoc,et al.  Model for modulation doped field effect transistor , 1982, IEEE Electron Device Letters.

[4]  D. Delagebeaudeuf,et al.  Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET , 1982, IEEE Transactions on Electron Devices.

[5]  H. Kroemer,et al.  Heterostructure bipolar transistors and integrated circuits , 1982, Proceedings of the IEEE.

[6]  H. Morkoc,et al.  Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors , 1983, IEEE Transactions on Electron Devices.

[7]  Pulse doped MODFET's , 1984, 1984 International Electron Devices Meeting.

[8]  R.T. Chen,et al.  GaAs/AlGaAs double heterostructure high electron mobility transistors , 1984, 1984 International Electron Devices Meeting.

[9]  P. Solomon,et al.  A GaAs gate heterojunction FET , 1984, IEEE Electron Device Letters.

[10]  B. Vinter.  Subbands and charge control in a two‐dimensional electron gas field‐effect transistor , 1984 .

[11]  H. Morkoç,et al.  Modeling of GaAs/AlGaAs MODFET inverters and ring oscillators , 1985, IEEE Electron Device Letters.