论文信息 - Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices - 字舞流文

Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

P. Godignon | M. Placidi | N. Mestres | J. Covington | P. Mawby | M. Zabala | P. Gammon | N. Rimmer | M. Jennings | A. Pérez‐Tomás | O. Guy | J. Llobet