论文信息 - ACLV control in x-ray lithography

ACLV control in x-ray lithography

In this paper, dimensional control of critical features in proximity x-ray lithography is discussed. CD error components attributed to x-ray mask, proximity exposure and resist process are identified. Analysis of linewidth control data at 180 nm and 150 nm ground rules for synchrotron based x-ray proximity lithography is presented. Data have been collected at IBM Advanced Lithography Facility equipped with x-ray stepper built by SVGL and Helios synchrotron radiation x-ray source.

Azalia A. Krasnoperova | Robert P. Rippstein | Janet M. Rocque | Denise M. Puisto

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