High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate

InGaAs junction field-effect transistors (JFETs) are fabricated in metalorganic chemical-vapor-deposition (MOCVD)-grown n-InGaAs and semi-insulating Fe:InP layers on n/sup +/-InP substrate with a P/Be co-implanted p/sup +/ self-aligned gate. The device exhibits a transconductance of 245 mS/mm (intrinsic transconductance of 275 mS/mm) at zero gate bias and good pinch-off behavior for a gate length of 0.5 mu m. The effective electron velocity is deduced to be 2.8*10/sup 7/ cm/s, equal to the theoretical prediction.<<ETX>>

[1]  L. Coldren,et al.  Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance , 1984, IEEE Electron Device Letters.

[2]  Akio Sasaki,et al.  Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-x GaxAs (x\cong0.5) for Microwave Devices , 1977 .

[3]  J. Selders,et al.  GaInAs junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing , 1986 .

[4]  N. Tabatabaie,et al.  Liquid Phase Epitaxial Growth , 1989 .

[5]  R. Leheny,et al.  An In0.53Ga0.47As junction field-effect transistor , 1980, IEEE Electron Device Letters.

[6]  Michael A. Littlejohn,et al.  Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys , 1977 .

[7]  T. H. Windhorn,et al.  The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K , 1982, IEEE Electron Device Letters.

[8]  Y. G. Chai,et al.  In0.53Ga0.47As submicrometer FET's Grown by MBE , 1983, IEEE Electron Device Letters.

[9]  T. Chang,et al.  Junction field-effect transistors using In0.53Ga0.47As material grown by molecular beam epitaxy , 1982, IEEE Electron Device Letters.

[10]  Y. G. Chai,et al.  Investigation of In0.53Ga0.47As for high-frequency microwave power FET's , 1985, IEEE Transactions on Electron Devices.

[11]  C. Hooper,et al.  Saturation velocity determination for In0.53Ga0.47As field‐effect transistors , 1981 .

[12]  D. Wake,et al.  A self-aligned In0.53Ga0.47As junction field-effect transistor grown by molecular beam epitaxy , 1984, IEEE Electron Device Letters.

[13]  J.C.M. Hwang,et al.  In0.53Ga0.47As FET's with insulator-assisted Schottky gates , 1982, IEEE Electron Device Letters.