20㎓ 대역의 AlGaN/GaN Spiral 인덕터 제작
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AlGaN/GaN Sapphire substrate has characteristics of high frequency operation and stabilization in a high temperature. On this substrate, we fabricated the structure of Spiral Inductor. It has a high SRF and Inductance. There are 5 Models by changing the spacing, width, diameter and turns. And use the COST(Cascade Open-Short-Thru) de-embedding me thod for Inductance extraction. Extracted Inductance in 20㎓ are 1.220∼2.947nH and the error rates are 0.68∼15.41% compared with HFSS Simulation. Fabri cated Spiral Inductor has a high SRF above 20㎓.