An RF switch design with adaptive DNW biasing in triple-well devices in 0.18-µm CMOS technology

Abstract In this paper, we present a 1.9 GHz CMOS transmit/receive switch with the common mode shunt configuration and adaptive deep N-well (DNW) biasing techniques in order to achieve a high port-to-port isolation. The common mode shunt structure provides a low impedance shunt path to suppress the leakage in the off-switching state, and adaptive DNW biasing can cancel leakage from differential signals in the substrate. Experimental data shows that the proposed design achieves up to 8–10 dB higher port-to-port isolation than that of a conventional switch topology while maintaining insertion loss and power handling capability. The proposed switch is implemented in a standard 0.18-µm CMOS process and compared with the reference design in the TX and RX mode.

[1]  Paul Leroux,et al.  Low-voltage low-power CMOS-RF transceiver design , 2002 .

[2]  J. Laskar,et al.  A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure , 2007, IEEE Microwave and Wireless Components Letters.

[3]  Ockgoo Lee,et al.  A high power CMOS differential T/R switch using multi-section impedance transformation technique , 2010, 2010 IEEE Radio Frequency Integrated Circuits Symposium.

[4]  Fan-Hsiu Huang,et al.  CMOS large-signal substrate modeling for high-power RF switch design , 2011, Asia-Pacific Microwave Conference 2011.

[5]  Robert Weigel,et al.  A fully integrated bulk-CMOS switch based tunable transformer for RF and antenna matching , 2013, 2013 IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet).

[6]  Ahmad Mirzaei,et al.  Highly Integrated and Tunable RF Front Ends for Reconfigurable Multiband Transceivers: A Tutorial , 2011, IEEE Transactions on Circuits and Systems I: Regular Papers.