The oligothiophene‐based field‐effect transistor: How it works and how to improve it

Metal‐insulator‐semiconductor field‐effect transistors (MISFETs) based on organic semiconductors, mainly conjugated organic polymers and oligomers, have been reported recently. Unlike conventional MISFETs, these devices work through the modulation of an accumulation layer at the semiconductor‐insulator interface. A model for organic MISFETs, derived by changing the classical equations according to this particular operating mode is proposed. The ohmic current, parallel to the channel current, and due to the nonrectifying character of source and drain contacts, has also been taken into account. According to this model, the characteristics of these organic devices can be improved by decreasing the doping level and the thickness of the semiconducting layer. Simple rules are deduced and applied to devices based on α‐conjugated sexithienyl.