Ellipsometric study of low-temperature silicon surface cleaning during the process of reactive ionized cluster beam deposition
暂无分享,去创建一个
[1] Rafael Reif,et al. Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement , 1985 .
[2] R. Chang,et al. Hydrogen plasma etching of semiconductors and their oxides , 1982 .
[3] D. Aspnes,et al. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry , 1979 .
[4] Y. Shiraki,et al. Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum , 1978 .
[5] L. Young,et al. Removal of oxide films from silicon surfaces in a high vacuum system: an in situ ellipsometric study , 1976 .
[6] N. Bashara,et al. Ellipsometric study of 400ev ion damage in silicon , 1972 .
[7] F. Lukes̆,et al. Oxidation of Si and GaAs in air at room temperature , 1972 .
[8] R. Azzam,et al. Unified Analysis of Ellipsometry Errors Due to Imperfect Components, Cell-Window Birefringence, and Incorrect Azimuth Angles* , 1971 .