Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
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M. Ramon | Raghaw Rai | Peter Fejes | Rama I. Hegde | Dina H. Triyoso | Philip J. Tobin | T. Guenther | D. Werho | Bruce E. White | Ran Liu | M. Ramón | R. Hegde | R. Rai | P. Tobin | D. Triyoso | P. Fejes | B. White | D. Roan | J. Grant | L. La | Ran Liu | J. Grant | D. Roan | L. B. La | J. Baker | C. Garza | J. Baker | D. Werho | C. Garza | T. Guenther
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