Spatially localized dynamic properties of individual interfaces in semiconducting oxides

Local electronic property variations at individual interfaces have been determined using scanning surface potential microscopy, a variant of atomic force microscopy in conjunction with locally applied electric fields. Micropatterning is used to isolate individual interfaces and position contacts so that biases can be controlled locally. Positional variations in the voltage dependent interface charge and density of states in polycrystalline zinc oxide are determined from surface potential imaging.

[1]  W. Vandervorst,et al.  Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy , 1998 .

[2]  Andreas Stemmer,et al.  Surface potential mapping: A qualitative material contrast in SPM , 1997 .

[3]  H. K. Wickramasinghe,et al.  Surface investigations with a Kelvin probe force microscope , 1992 .

[4]  T. Gupta.  Microstructural engineering through donor and acceptor doping in the grain and grain boundary of a polycrystalline semiconducting ceramic , 1992 .

[5]  A. Broniatowski,et al.  A high-resolution scanning Kelvin probe microscope for contact potential measurements on the 100 nm scale , 1997 .

[6]  D. Bonnell,et al.  Measurement of space charge adjacent to oxide grain boundaries by tunneling spectroscopy , 1992 .

[7]  D. Bonnell,et al.  Nanometer-Scale Variations in Interface Potential by Scanning Probe Microscopy , 1999 .

[8]  David L. Carroll,et al.  In-situ measurement of electric fields at individual grain boundaries in TiO2 , 1995 .

[9]  David R. Clarke,et al.  Effect of variations in grain size and grain boundary barrier heights on the current-voltage characteristics of ZnO varistors , 1996 .

[10]  A. Henning,et al.  Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis , 1996 .

[11]  D. Carroll,et al.  Schottky-barrier formation at nanoscale metal-oxide interfaces , 1997 .

[12]  G. Dunlop,et al.  Development of interfacial microstructure during cooling of a ZnO varistor material , 1989 .

[13]  G. Blatter,et al.  REVIEW ARTICLE: Electrical properties of grain boundaries in polycrystalline compound semiconductors , 1990 .

[14]  D. Abraham,et al.  High resolution atomic force microscopy potentiometry , 1991 .

[15]  H. K. Wickramasinghe,et al.  Kelvin probe force microscopy , 1991 .