Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots
暂无分享,去创建一个
Paul Voisin | Aristide Lemaître | Pascale Senellart | Jan A. Gaj | Olivier Krebs | A. Lemaître | P. Voisin | P. Senellart | K. Kowalik | O. Krebs | K. Kowalik | S. Laurent | J. Gaj | Sébastien Laurent
[1] M. S. Skolnick,et al. Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots. , 2000, Physical review letters.
[2] Besombes,et al. Exciton and biexciton fine structure in single elongated islands grown on a vicinal surface , 2000, Physical review letters.
[3] B. Gerardot,et al. Voltage-controlled optics of a quantum dot. , 2004, Physical review letters.
[4] A. Kavokin,et al. Fine structure of localized exciton levels in quantum wells , 1998 .
[5] G. E. Pikus,et al. Superlattices and Other Heterostructures , 1995 .
[6] A. A. Gorbunov,et al. Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots , 2002 .
[7] A. Zunger,et al. Pseudopotential calculation of the excitonic fine structure of million-atom self-assembledIn1−xGaxAs/GaAsquantum dots , 2003 .
[8] Johann Peter Reithmaier,et al. ELECTRON AND HOLE G FACTORS AND EXCHANGE INTERACTION FROM STUDIES OF THE EXCITON FINE STRUCTURE IN IN0.60GA0.40AS QUANTUM DOTS , 1999 .