Two Level Compact Simulation Methodology for Timing Analysis of Power-Switched Circuits

Standby-power dissipation in ultra-deep submicron CMOS can be reduced by power switching. As the cut-off device has a strong impact on area consumption, minimum power-down time, signal delay and leakage suppression, a proper sizing of this device is of general importance. Therefore a two level compact simulation methodology is proposed which provides fast and accurate CAD support to the switch design task.