Large-signal linearity in III-N MOSDHFETs

The authors report the output RF signal distortions in the novel SiO/sub 2/-AlGaN-InGaN-GaN metal-oxide-semiconductor double heterostructure FET (MOSDHFET) device structure. Their comparative studies of MOSDHFETs and Schottky gate type DHFETs fabricated on the same wafer show significantly improved RF output signal linearity in MOSDHFETs at high-input signals. At the RF output powers close to saturation, the relative level of the second and third harmonic powers in MOSDHFETs was found to be less than -30 dB, which is about 15-20 dB lower as compared to identical geometry DHFET. This improvement is attributed to a better linearity of the MOSDHFET current-gate voltage characteristics.

[1]  C. Rauscher,et al.  A Technique for Predicting Large Signal Performance of a GaAs MESFET , 1978, 1978 IEEE-MTT-S International Microwave Symposium Digest.

[2]  J. Palmour,et al.  High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers , 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

[3]  C. Rauscher,et al.  Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.s , 1977 .

[4]  A. Lunev,et al.  AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor , 2000, IEEE Electron Device Letters.

[5]  Michael S. Shur,et al.  AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates , 2000 .

[6]  M. Shur,et al.  SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs , 2002, IEEE Electron Device Letters.

[7]  G. Heiter.  Characterization of Nonlinearities in Microwave Devices and Systems , 1973 .

[8]  Michael S. Shur,et al.  AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor , 2001 .

[9]  A. Tarakji,et al.  Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging , 2001, IEEE Electron Device Letters.

[10]  C. Rauscher,et al.  Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t. , 1977 .

[11]  V. Riginos,et al.  High-efficiency MESFET linear amplifier operating at 4 GHz , 1977, 1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[12]  Michael S. Shur,et al.  Semiconductor Device Modeling For VLSI , 1993 .