Fabrication and characterization of silicon nanowires with triangular cross section

Fabrication processes for silicon nanowires with triangular cross section are presented. Processes based on high resolution electron beam lithography and anisotropic etching have been developed on silicon on insulator substrates. As shown by numerical simulations, the triangular shape of the wire allows strong reduction of the dimensions by successive oxidation steps. Moreover, it is easy to define a gate on top of the wire that wraps the device and, with the back gate silicon substrate, allows the biasing of the structure on all sides. The conduction through the wire, as a function of the gate bias and for different temperatures, is reported and discussed.

[1]  Y. Wan,et al.  Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography , 2004 .

[2]  M. Nagase,et al.  Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics , 1997 .

[3]  X. Baie,et al.  A silicon-on-insulator quantum wire , 1996 .

[4]  H. Roskos,et al.  A triangle‐shaped nanoscale metal–oxide–semiconductor device , 1996 .

[5]  M. Je,et al.  A silicon quantum wire transistor with one-dimensional subband effects , 2000 .

[6]  Irena Barycka,et al.  Silicon anisotropic etching in KOH-isopropanol etchant , 1995 .

[7]  H. Yokoyama,et al.  Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate , 1998, Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135).

[8]  C. Lieber,et al.  Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species , 2001, Science.

[9]  Doped silicon single electron transistors with single island characteristics , 2000 .

[10]  Peidong Yang,et al.  Controlled growth of Si nanowire arrays for device integration. , 2005, Nano letters.

[11]  Jiangtao Hu,et al.  Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires , 1999, Nature.

[12]  A. Heuberger,et al.  Anisotropic Etching of Crystalline Silicon in Alkaline Solutions I . Orientation Dependence and Behavior of Passivation Layers , 1990 .

[13]  Yasuo Takahashi,et al.  Si nanostructures formed by pattern-dependent oxidation , 1998 .

[14]  Stephen Y. Chou,et al.  Silicon single-electron quantum-dot transistor switch operating at room temperature , 1998 .

[15]  A. Diligenti,et al.  Micromachined silicon suspended wires with submicrometric dimensions , 2001 .

[16]  Jae-Young Yu,et al.  Silicon nanowire devices , 2000 .

[17]  A. Vladár,et al.  Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching , 2002 .

[18]  Silicon nanowires fabricated by means of an underetching technique , 2005 .

[19]  A. Galeckas,et al.  Size-reduced silicon nanowires: Fabrication and electrical characterization , 2005 .

[20]  B. Legrand,et al.  Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements , 2002 .

[21]  Harry E. Ruda,et al.  Growth of silicon nanowires via gold/silane vapor–liquid-solid reaction , 1997 .

[22]  Charles M. Lieber,et al.  A laser ablation method for the synthesis of crystalline semiconductor nanowires , 1998, Science.

[23]  Irena Barycka,et al.  Silicon anisotropic etching in alkaline solutions I. The geometric description of figures developed under etching Si(100) in various solutions , 1998 .