Formation characteristics and stability of nanometric TiN film in multilayers

Formation characteristics and stability of TiN film as coating layer on (alpha) -Si film or as interlayer between W films or W and Si films have been studied by TEM, SAD and XRD. Experimental results show that sputtered nanometric TiN films are homogeneous polycrystalline with high stability: diffusion between TiN and W or TiN and Si can be neglected until 850 degree(s)C and there is no reaction of TiN with W or TiN with Si in these multilayers even if they are annealed up to 900 degree(s)C.