Progress on vertical-cavity surface-emitting laser arrays for infrared illumination applications

For infrared illumination with wavelength range of 808nm-1064nm, vertical-cavity surface-emitting lasers (VCSELs) offer many advantageous properties including superior beam quality (such as low divergence, circular shape beam and speckle-free image), increased eye safety, high reliability and low manufacturing cost. We report our progress on highpower high-efficiency VCSELs and two dimensional (2D) VCSEL arrays for such illumination applications. GaAs-based VCSEL wafers are grown by MOCVD and processed into either top-emitting or bottom-emitting devices depending on the emission wavelength and applications. Results from both single devices and arrays are presented. In particular, record-high power conversion efficiency (PCE) of 63.4% with 300mW output was achieved from VCSELs at 1064nm. Such VCSELs also operate with <55% PCE at 50C. For a 2mm by 10mm array, 56.4% PCE with 150W output was demonstrated. Using those VCSELs and arrays as building blocks, various high power illuminators ranging from a few Watts to over 100 kiloWatts have been fabricated.

[1]  Kent D. Choquette,et al.  Vertical-cavity surface emitting lasers: moving from research to manufacturing , 1997, Proc. IEEE.

[2]  L. Arthur D'Asaro,et al.  High-power high-efficiency 2D VCSEL arrays , 2008, SPIE OPTO.

[3]  Andrew Clark,et al.  Commercialization of Honeywell's VCSEL technology , 2000, Photonics West - Optoelectronic Materials and Devices.

[4]  L. Coldren,et al.  High-performance small vertical-cavity lasers: a comparison of measured improvements in optical and current confinement in devices using tapered apertures , 1999 .

[5]  A. Moser,et al.  Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs‐GaAs laser facets , 1992 .

[6]  Brian Thibeault,et al.  Current spreading in apertured vertical-cavity lasers , 1997, Photonics West.

[7]  Hans-Ulrich Pfeiffer,et al.  Reliability of 980 nm pump lasers for submarine, long-haul terrestrial, and low cost metro applications , 2002, Optical Fiber Communication Conference and Exhibit.

[8]  R. Michalzik.  VCSELs: Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers , 2012 .

[9]  Dan Botez,et al.  73% CW power conversion efficiency at 50 W from 970 nm diode laser bars , 2005 .

[10]  James D. Wynn,et al.  Efficient vertical-cavity surface-emitting lasers for infrared illumination applications , 2011, OPTO.

[11]  S. Bounnak,et al.  200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers , 1995, IEEE Photonics Technology Letters.

[12]  D. Deppe,et al.  Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .

[13]  A. R. Sugg,et al.  Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .

[14]  L. Arthur D'Asaro,et al.  Progress in high-power high-efficiency VCSEL arrays , 2009, OPTO.

[15]  P. Dapkus,et al.  Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers , 1998, IEEE Photonics Technology Letters.