Bulk built in current sensors for single event transient detection in deep-submicron technologies

As device dimensions are scaled down, single event transients (SET) are increasingly affecting the reliability of integrated circuits. An SET is a transient voltage perturbation caused by an energetic particle strike at the semiconductor. This work studies the applicability of bulk built in current sensors (bulk-BICS) for SET detection in deep-submicron technologies. The bulk-BICS detects the transient current generated by the impact of an energetic particle at a sensitive circuit node. The efficiency and applicability of this approach to SET detection is demonstrated through device and circuit level simulations.

[1]  James F. Ziegler,et al.  Terrestrial cosmic rays , 1996, IBM J. Res. Dev..

[2]  G. C. Messenger,et al.  Collection of Charge on Junction Nodes from Ion Tracks , 1982, IEEE Transactions on Nuclear Science.

[3]  Fernanda Gusmão de Lima Kastensmidt,et al.  Using Bulk Built-in Current Sensors to Detect Soft Errors , 2006, IEEE Micro.

[4]  Kuen-Jong Lee,et al.  A high-speed low-voltage built-in current sensor , 1997, Digest of Papers IEEE International Workshop on IDDQ Testing.

[5]  M.M.R. Williams,et al.  The stopping and ranges of ions in matter , 1978 .

[6]  G. R. Srinivasan Modeling the cosmic-ray-induced soft-error rate in integrated circuits: An overview , 1996, IBM J. Res. Dev..

[7]  Adit D. Singh,et al.  A differential built-in current sensor design for high speed IDDQ testing , 1995, Proceedings of the 8th International Conference on VLSI Design.

[8]  J. W. Meredith,et al.  Microelectronics reliability , 1988, IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'.

[9]  Christos A. Papachristou,et al.  An efficient BICS design for SEUs detection and correction in semiconductor memories , 2005, Design, Automation and Test in Europe.

[10]  Lloyd W. Massengill,et al.  Basic mechanisms and modeling of single-event upset in digital microelectronics , 2003 .