论文信息 - Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications

Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications

Abstract This work presents an investigation of DC and Low Frequency Noise dispersion in 0.13 μm SiGe:C BiCMOS Heterojunction Bipolar Transistors (HBTs) used for mm-Wave to Terahertz applications. Therefore, DC and Low Frequency Noise measurements have been performed over a half wafer on a large number of transistors. A statistical 1/f noise compact model is presented as well as a study of the repartition of generation-recombination components. The main Low Frequency Noise sources are found to be homogenously distributed in the intrinsic base-emitter junction. The mean 1/f noise level, evaluated by the figure of merit KBmean, is equal to 6 10−10 μm2.

[1] E. May. On the origin of 1/ noise , 1988 .

[2] On the origin of 1/f noise in polysilicon emitter bipolar transistors , 1999 .

[3] P. Chevalier,et al. 0.13μm SiGe BiCMOS technology for mm-wave applications , 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[4] P. Chevalier,et al. Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications , 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

[5] M. Jamal Deen,et al. Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review , 2003, SPIE International Symposium on Fluctuations and Noise.

[6] Yisong Dai. Generation-recombination noise in bipolar transistors , 2001, Microelectron. Reliab..

[7] Ognian Marinov,et al. A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs , 2002 .

[8] Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors , 2007 .

[9] S. Haendler,et al. Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors , 2011, 2011 21st International Conference on Noise and Fluctuations.

[10] John D. Cressler,et al. Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors , 1996, IEEE J. Solid State Circuits.