论文信息 - Temperature Dependence of Hole Velocity in p‐GaAs

Temperature Dependence of Hole Velocity in p‐GaAs

The temperature dependence of the saturation drift velocity of holes in p‐GaAs has been experimentally determined. The material used was grown epitaxially and had a low field mobility μ≈400 cm2/V sec and carrier concentration p0≈1×1016/cm3, both at T=300°K. The saturation velocity was 1.0×107 cm/sec at T=300°K, and decreased to 7×106 cm/sec at T=469°K. The temperature dependence of the low‐field mobility was also measured and was found to be in good agreement with the recent theory of Wiley and DiDomenico.

[1] D. E. Hill. Activation Energy of Holes in Zn‐Doped GaAs , 1970 .

[2] E. Conwell. High field transport in semiconductors , 1967 .

[3] Robert D. Larrabee,et al. Drift Velocity Saturation in p‐Type Germanium , 1959 .

[4] R. Bray,et al. Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in p-Type Germanium , 1964 .

[5] M. Steele,et al. A rapid evaluation technique for functional Gunn diodes , 1970 .

[6] V. Dalal. HOLE VELOCITY IN p‐GaAs , 1970 .

[7] C. Kim. A GaAs avalanche diode analysis and an approximate indirect measurement of hole saturation velocity , 1969 .

[8] Albert Rose,et al. Concepts in photoconductivity and allied problems , 1963 .

[9] J. L. Blue,et al. A small-signal theory of avalanche noise in IMPATT diodes , 1967 .

[10] L. Armstrong,et al. HIGH‐POWER AND HIGH‐EFFICIENCY GaAs AVALANCHE DIODES , 1969 .

[11] M. Lampert,et al. Current injection in solids , 1970 .