Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission
暂无分享,去创建一个
[1] R. Carius,et al. Luminescence of erbium-implanted dielectric films , 2003 .
[2] R. Carius,et al. Green electroluminescence from a Tb-doped AlN thin-film device on Si , 2002 .
[3] F. Alvarez,et al. Structural properties of aluminum–nitrogen films prepared at low temperature , 2002 .
[4] A. Osvet,et al. Blue, green and red emission from Ce3+, Tb3+ and Eu3+ ions in amorphous GaN and AlN thin films , 2002 .
[5] M. Albrecht,et al. Excitation mechanisms and structure-related Er3+ emission in amorphous and nanocrystalline GaN films ☆ , 2001 .
[6] I. Brown,et al. Visible emission from AlN doped with Eu and Tb ions , 2001 .
[7] Martin E. Kordesch,et al. Band gap engineering in amorphous AlxGa1−xN: Experiment and ab initio calculations , 2000 .
[8] Ian G. Brown,et al. Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering , 2000 .
[9] G. R. Harp,et al. Visible cathodoluminescence of Er-doped amorphous AlN thin films , 1999 .
[10] F. Ren,et al. Luminescence enhancement in AlN(Er) by hydrogenation , 1997 .
[11] C. R. Abernathy,et al. Direct and indirect excitation of Er3+ ions in Er: AIN , 1997 .
[12] S. J. Pearton,et al. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN , 1994 .