论文信息 - Thermal dedoping of poly(3-n-hexylthiophene) films

Thermal dedoping of poly(3-n-hexylthiophene) films

Abstract It is shown that the conductivity of undoped poly(3-n-hexylthiophene) is reversibly reduced a few orders of magnitude by heating beyond the glass-rubber transition (room temperature) in a nitrogen ambient. Impedance spectroscopy reveals the presence of localized and delocalized charge carriers and shows the influence of oxygen on the conductivity.

[1] H. Bässler,et al. Photoconduction in poly(3-alkylthiophene). I: Charge carrier generation , 1992 .

[2] D. S. Pearson,et al. Molecular characterization of poly(3-hexylthiophene) , 1991 .

[3] B. Ruiter,et al. Dielectric properties of poly(3-n-hexylthiophene) powder , 1991 .

[4] S. Chen,et al. Effect of glass transition on conductivity of neutral poly(3‐alkylthiophene)s , 1992 .

[5] Isao Nakajima,et al. Nickel-phosphine complex-catalyzed Grignard coupling—II : Grignard coupling of heterocyclic compounds , 1982 .

[6] H. Zimmer,et al. A Convenient Synthesis of 3-Alkylthiophenes , 1986 .

[7] R. V. D. Leur. a.c. electrical properties of poly(3-n-hexylthiophene) , 1992 .

[8] Henrique L. Gomes,et al. Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene) , 1991 .