Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy

Photoluminescence spectroscopy of nitrogen-related emissions in ZnO is used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A0) emission band has been monitored in as-grown single crystals of ZnO. Line shape analysis of this band is used to determine the acceptor ionization energy. The temperature dependence of the band gap for ZnO was included in our analysis and the low-temperature acceptor ionization energy for substitutional nitrogen at an oxygen site in ZnO was found to be EA=209±3 meV. Our line shape analysis indicates a small temperature-dependent decrease in EA for T>5 K.

[1]  Lijun Wang,et al.  Molecular nitrogen (N2−) acceptors and isolated nitrogen (N−) acceptors in ZnO crystals , 2003 .

[2]  D. C. Reynolds,et al.  Production of nitrogen acceptors in ZnO by thermal annealing , 2002 .

[3]  Andreas Waag,et al.  Donor–acceptor pair transitions in ZnO substrate material , 2001 .

[4]  M. J. Klopfstein,et al.  Temperature dependent exciton photoluminescence of bulk ZnO , 2003 .

[5]  Y. P. Varshni Temperature dependence of the energy gap in semiconductors , 1967 .

[6]  M. Strassburg,et al.  Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO , 2002 .

[7]  Tomoji Kawai,et al.  p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping , 1999 .

[8]  Nancy C. Giles,et al.  Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy , 2003 .

[9]  B. Meyer,et al.  Optical investigations on excitons bound to impurities and dislocations in ZnO , 2003 .

[10]  M. J. Soares,et al.  Photoluminescence studies in ZnO samples , 2001 .

[11]  T. Furumochi,et al.  Donor–acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates , 2003 .

[12]  Koji Yano,et al.  Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition , 1997 .

[13]  D. C. Reynolds,et al.  Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy , 2002 .

[14]  D. C. Reynolds,et al.  Neutral-Donor-Bound-Exciton Complexes in ZnO Crystals , 1998 .