Low temperature deposition of Ga2O3 films on sapphire and epi-GaN substrates
暂无分享,去创建一个
Q. Feng | Chunfu Zhang | Jincheng Zhang | Jing Ning | Hong Zhou | Tao Zhang | Y. Hao | Z. Hu | Y. Zuo | Yachao Zhang | Jinbang Ma | Yixin Yao | Yifan Li | Q. Cheng
[1] N. Gopalakrishnan,et al. Room temperature ammonia sensing performances of pure and Sn doped β-Ga2O3 , 2021 .
[2] Yan Hu,et al. Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering , 2021 .
[3] Shujing Sun,et al. Epitaxial growth of β-Ga2O3 nanowires from horizontal to obliquely upward evolution , 2021 .
[4] Amit Verma,et al. Temperature Dependence of β-Ga2O3 Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition , 2021 .
[5] K. Cadien,et al. Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP , 2021 .
[6] J. Ha,et al. Investigation of defect structure in homoepitaxial (2¯01) β-Ga2O3 layers prepared by plasma-assisted molecular beam epitaxy , 2020 .
[7] F. Ren,et al. Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire , 2020 .
[8] Shuwen Zheng,et al. Effect of different substrates on Si and Ta co-doped Ga2O3 films prepared by pulsed laser deposition , 2020 .
[9] G. Chang,et al. Influence of growth temperature on the characteristics of β-Ga2O3 epitaxial films and related solar-blind photodetectors , 2019, Applied Surface Science.
[10] T. He,et al. Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition , 2019, Materials Letters.
[11] M. Brett,et al. Understanding the Effects of a High Surface Area Nanostructured Indium Tin Oxide Electrode on Organic Solar Cell Performance. , 2017, ACS applied materials & interfaces.
[12] S. Mahdavi,et al. Synthesis of sodium tungsten oxide nano-thick plates , 2012 .