Theoretical Study of Boron Clustering in Silicon

[1]  W. Goddard,et al.  Diffusion of the diboron pair in silicon. , 2002, Physical review letters.

[2]  L. Colombo,et al.  Atomistic Study of Boron Clustering in Silicon , 2001 .

[3]  Xiang-Yang Liu,et al.  First-principles modeling of boron clustering in silicon , 2001 .

[4]  Haller,et al.  Comment on "Self-diffusion in silicon: similarity between the properties of native point defects" , 2000, Physical review letters.

[5]  W. Windl,et al.  Ab initio modeling of boron clustering in silicon , 2000 .

[6]  T. Lenosky,et al.  Ab initio energetics of boron-interstitial clusters in crystalline Si , 2000 .

[7]  P. Newman,et al.  Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence , 2000 .

[8]  N. Cowern,et al.  Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon , 2000 .

[9]  Kim,et al.  Stability of Si-interstitial defects: from point to extended defects , 2000, Physical review letters.

[10]  Babak Sadigh,et al.  MECHANISM OF BORON DIFFUSION IN SILICON : AN AB INITIO AND KINETIC MONTE CARLO STUDY , 1999 .

[11]  Scott T. Dunham,et al.  First-Principles Study of Boron Diffusion in Silicon , 1999 .

[12]  P. Griffin,et al.  SELF-DIFFUSION IN SILICON : SIMILARITY BETWEEN THE PROPERTIES OF NATIVE POINT DEFECTS , 1999 .

[13]  H. Gossmann,et al.  B cluster formation and dissolution in Si: A scenario based on atomistic modeling , 1999 .

[14]  M. Johnson,et al.  Atomic scale models of ion implantation and dopant diffusion in silicon , 1999 .

[15]  P. Clancy,et al.  Tight-binding studies of the tendency for boron to cluster in c-Si. II. Interaction of dopants and defects in boron-doped Si , 1998 .

[16]  K. Suguro,et al.  Ultra high dose boron ion implantation: super-saturation of boron and its application , 1998 .

[17]  M. D. Johnson,et al.  THE FRACTION OF SUBSTITUTIONAL BORON IN SILICON DURING ION IMPLANTATION AND THERMAL ANNEALING , 1998 .

[18]  D. Vanderbilt,et al.  Ab-initio study of SrTiO3 surfaces , 1998, cond-mat/9802207.

[19]  K. Chang,et al.  First-principles study of the self-interstitial diffusion mechanism in silicon , 1998 .

[20]  M. Meléndez-Lira,et al.  Microscopic carbon distribution in Si1-yCy alloys: A Raman scattering study , 1997 .

[21]  P. Stolk,et al.  Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469 , 1997 .

[22]  Meijie Tang,et al.  Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes , 1997 .

[23]  Mark E. Law,et al.  Ion beams in silicon processing and characterization , 1997 .

[24]  J. Poate,et al.  B diffusion and clustering in ion implanted Si: The role of B cluster precursors , 1997 .

[25]  P. A. Stolk,et al.  Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon , 1996 .

[26]  Zhu,et al.  Ab initio pseudopotential calculations of B diffusion and pairing in Si. , 1996, Physical review. B, Condensed matter.

[27]  G. Kresse,et al.  Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .

[28]  Martin Jaraiz,et al.  Simulation of cluster evaporation and transient enhanced diffusion in silicon , 1996 .

[29]  Bracht,et al.  Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions. , 1995, Physical review. B, Condensed matter.

[30]  P. Stolk,et al.  TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON , 1995 .

[31]  Georg Kresse,et al.  Norm-conserving and ultrasoft pseudopotentials for first-row and transition elements , 1994 .

[32]  A. Murakoshi,et al.  Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor , 1994 .

[33]  Miyoko O. Watanabe,et al.  Hole generation by icosahedral B12 in high‐dose boron as‐implanted silicon , 1993 .

[34]  Asta,et al.  First-principles phase-stability study of fcc alloys in the Ti-Al system. , 1992, Physical review. B, Condensed matter.

[35]  E. Tarnow Theory of two boron neutral pair defects in silicon , 1992 .

[36]  Paxton,et al.  High-precision sampling for Brillouin-zone integration in metals. , 1989, Physical review. B, Condensed matter.

[37]  G. D. Watkins,et al.  Negative-UProperties for Interstitial Boron in Silicon , 1982 .

[38]  A. Magna,et al.  A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon , 2002 .

[39]  D. Cahill,et al.  Electrically active and inactive b lattice sites in ultrahighly b doped si(001): An x-ray near-edge absorption fine-structure and high-resolution diffraction study , 1999 .

[40]  O. Sankey,et al.  First–Principles Investigation of the Ordered Si 4 c compound , 1998 .

[41]  A. Demkov,et al.  First-Principles Study of N Impurities in SiC Polytypes , 1998 .

[42]  Martin J. Gander,et al.  ALAMODE: A Layered Model Development Environment , 1995 .

[43]  H. Flood,et al.  The Crystal Structure of B2.89Si. , 1962 .