Theoretical Study of Boron Clustering in Silicon
暂无分享,去创建一个
[1] W. Goddard,et al. Diffusion of the diboron pair in silicon. , 2002, Physical review letters.
[2] L. Colombo,et al. Atomistic Study of Boron Clustering in Silicon , 2001 .
[3] Xiang-Yang Liu,et al. First-principles modeling of boron clustering in silicon , 2001 .
[4] Haller,et al. Comment on "Self-diffusion in silicon: similarity between the properties of native point defects" , 2000, Physical review letters.
[5] W. Windl,et al. Ab initio modeling of boron clustering in silicon , 2000 .
[6] T. Lenosky,et al. Ab initio energetics of boron-interstitial clusters in crystalline Si , 2000 .
[7] P. Newman,et al. Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence , 2000 .
[8] N. Cowern,et al. Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon , 2000 .
[9] Kim,et al. Stability of Si-interstitial defects: from point to extended defects , 2000, Physical review letters.
[10] Babak Sadigh,et al. MECHANISM OF BORON DIFFUSION IN SILICON : AN AB INITIO AND KINETIC MONTE CARLO STUDY , 1999 .
[11] Scott T. Dunham,et al. First-Principles Study of Boron Diffusion in Silicon , 1999 .
[12] P. Griffin,et al. SELF-DIFFUSION IN SILICON : SIMILARITY BETWEEN THE PROPERTIES OF NATIVE POINT DEFECTS , 1999 .
[13] H. Gossmann,et al. B cluster formation and dissolution in Si: A scenario based on atomistic modeling , 1999 .
[14] M. Johnson,et al. Atomic scale models of ion implantation and dopant diffusion in silicon , 1999 .
[15] P. Clancy,et al. Tight-binding studies of the tendency for boron to cluster in c-Si. II. Interaction of dopants and defects in boron-doped Si , 1998 .
[16] K. Suguro,et al. Ultra high dose boron ion implantation: super-saturation of boron and its application , 1998 .
[17] M. D. Johnson,et al. THE FRACTION OF SUBSTITUTIONAL BORON IN SILICON DURING ION IMPLANTATION AND THERMAL ANNEALING , 1998 .
[18] D. Vanderbilt,et al. Ab-initio study of SrTiO3 surfaces , 1998, cond-mat/9802207.
[19] K. Chang,et al. First-principles study of the self-interstitial diffusion mechanism in silicon , 1998 .
[20] M. Meléndez-Lira,et al. Microscopic carbon distribution in Si1-yCy alloys: A Raman scattering study , 1997 .
[21] P. Stolk,et al. Defects and diffusion in silicon processing. Materials Research Society symposium proceedings Volume 469 , 1997 .
[22] Meijie Tang,et al. Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes , 1997 .
[23] Mark E. Law,et al. Ion beams in silicon processing and characterization , 1997 .
[24] J. Poate,et al. B diffusion and clustering in ion implanted Si: The role of B cluster precursors , 1997 .
[25] P. A. Stolk,et al. Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon , 1996 .
[26] Zhu,et al. Ab initio pseudopotential calculations of B diffusion and pairing in Si. , 1996, Physical review. B, Condensed matter.
[27] G. Kresse,et al. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .
[28] Martin Jaraiz,et al. Simulation of cluster evaporation and transient enhanced diffusion in silicon , 1996 .
[29] Bracht,et al. Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions. , 1995, Physical review. B, Condensed matter.
[30] P. Stolk,et al. TRAP-LIMITED INTERSTITIAL DIFFUSION AND ENHANCED BORON CLUSTERING IN SILICON , 1995 .
[31] Georg Kresse,et al. Norm-conserving and ultrasoft pseudopotentials for first-row and transition elements , 1994 .
[32] A. Murakoshi,et al. Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor , 1994 .
[33] Miyoko O. Watanabe,et al. Hole generation by icosahedral B12 in high‐dose boron as‐implanted silicon , 1993 .
[34] Asta,et al. First-principles phase-stability study of fcc alloys in the Ti-Al system. , 1992, Physical review. B, Condensed matter.
[35] E. Tarnow. Theory of two boron neutral pair defects in silicon , 1992 .
[36] Paxton,et al. High-precision sampling for Brillouin-zone integration in metals. , 1989, Physical review. B, Condensed matter.
[37] G. D. Watkins,et al. Negative-UProperties for Interstitial Boron in Silicon , 1982 .
[38] A. Magna,et al. A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon , 2002 .
[39] D. Cahill,et al. Electrically active and inactive b lattice sites in ultrahighly b doped si(001): An x-ray near-edge absorption fine-structure and high-resolution diffraction study , 1999 .
[40] O. Sankey,et al. First–Principles Investigation of the Ordered Si 4 c compound , 1998 .
[41] A. Demkov,et al. First-Principles Study of N Impurities in SiC Polytypes , 1998 .
[42] Martin J. Gander,et al. ALAMODE: A Layered Model Development Environment , 1995 .
[43] H. Flood,et al. The Crystal Structure of B2.89Si. , 1962 .