Extension of resonant cavity-enhanced photodetection into the MWIR and LWIR ranges using a Ga-free type-II strained-layer superlattice
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[1] Amy W. K. Liu,et al. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb , 2011 .
[2] Jerry R. Meyer,et al. Resonant-cavity infrared detector with five-quantum-well absorber and 34% external quantum efficiency at 4 μm. , 2019, Optics express.
[3] A. Bainbridge,et al. Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared , 2019, Applied Physics Letters.
[4] J. Muszalski,et al. Resonant cavity enhanced photonic devices , 1995 .
[5] Piotr Martyniuk,et al. Antimonide-based Infrared Detectors: A New Perspective , 2018 .
[6] Alexander Soibel,et al. Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices , 2013 .
[7] L. Hockstad,et al. Inventory of U.S. Greenhouse Gas Emissions and Sinks , 2018 .
[8] Hui Li,et al. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices , 2012 .
[9] Jerry R. Meyer,et al. Band parameters for III–V compound semiconductors and their alloys , 2001 .
[10] Chris C. Phillips,et al. 3 m InAs resonant-cavity-enhanced photodetector , 2003 .
[11] Manijeh Razeghi,et al. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection , 2014 .
[12] Steve Grossman,et al. MWIR InAsSb XBn detectors for high operating temperatures , 2010, Defense + Commercial Sensing.
[13] E. R. Polovtseva,et al. The HITRAN2012 molecular spectroscopic database , 2013 .
[14] G. Belenky,et al. Bulk InAsSb with 0.1 eV bandgap on GaAs , 2017 .
[15] Alexander Soibel,et al. Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices , 2015 .