Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions
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[1] Tekman,et al. Theoretical study of transport through a quantum point contact. , 1991, Physical review. B, Condensed matter.
[2] R. Robinett. Visualizing the solutions for the circular infinite well in quantum and classical mechanics , 1996 .
[3] J. Sune,et al. Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/ films , 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
[4] S. O. Park,et al. Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .
[5] M. Rozenberg,et al. A mechanism for unipolar resistance switching in oxide nonvolatile memory devices , 2007, 0707.3077.
[6] K. Pey,et al. BEEM studies on metal high K-dielectric HfO2 interfaces , 2007 .
[7] A. Sawa. Resistive switching in transition metal oxides , 2008 .
[8] Ute Drechsler,et al. Transition-metal-oxide-based resistance-change memories , 2008, IBM J. Res. Dev..
[9] D. Wolansky,et al. Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications , 2009 .
[10] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[11] C. Hwang,et al. The conical shape filament growth model in unipolar resistance switching of TiO2 thin film , 2009 .
[12] P. Gonon,et al. High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies , 2009 .
[13] Paul K. Hurley,et al. Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures , 2009 .