论文信息 - High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells - 字舞流文

High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

D. Huffaker | V. R. Whiteside | K. Hossain | I. Sellers | M. Debnath | B. Liang | R. B. Laghumavarapu | T. Mishima | M. Santos | Yang Cheng