Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (VFQ)−1 Co-Optimization

GaN-on-GaN vertical diode is a promising device for next-generation power electronics. Its breakdown voltage (BV) is limited by edge termination designs such as guard rings. The design space of guard rings is huge and it is difficult to optimize manually. In this paper, we propose an effective inverse design strategy to co-optimize BV and (VFQ)−1, where BV, VF, and Q are the breakdown voltage, forward voltage, and reserve capacitive charge of the diode, respectively. Using rapid Technology Computer-Aided-Design (TCAD) simulations, neural network (NN), and Pareto front generation, a GaN-on-GaN diode is optimized within 24 hours. We can obtain structures with 200V higher BV at medium (VFQ)−1 or find a nearly ideal BV structure with 25% higher BV2/Ron compared to the best randomly generated TCAD data.

[1]  F. Udrea,et al.  Multidimensional device architectures for efficient power electronics , 2022, Nature Electronics.

[2]  H. Wong,et al.  Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ML-enabled Surrogate Model , 2022, Solid-State Electronics.

[3]  N. Chaturvedi,et al.  Multi-output deep learning model for simultaneous prediction of figure of merits (Ion, Gm, and Vth) of gallium nitride high electron mobility transistors , 2022, Journal of Applied Physics.

[4]  A. Allerman,et al.  Development of High-Voltage Vertical GaN PN Diodes , 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

[5]  T. Palacios,et al.  (Ultra)Wide-Bandgap Vertical Power FinFETs , 2020, IEEE Transactions on Electron Devices.

[6]  T. Oka,et al.  Recent development of vertical GaN power devices , 2019, Japanese Journal of Applied Physics.

[7]  Patrick Fay,et al.  High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination , 2018, Applied Physics Letters.

[8]  Hiu Yung Wong,et al.  Normally-Off GaN HFET Based on Layout and Stress Engineering , 2016, IEEE Electron Device Letters.

[9]  R. V. Mickevicius,et al.  Design space and origin of off-state leakage in GaN vertical power diodes , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[10]  Daniel Piedra,et al.  Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes , 2015, IEEE Transactions on Electron Devices.

[11]  Takashi Shinohe,et al.  Guard ring assisted RESURF: a new termination structure providing stable and high breakdown voltage for SiC power devices , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[12]  Kalyanmoy Deb,et al.  A fast and elitist multiobjective genetic algorithm: NSGA-II , 2002, IEEE Trans. Evol. Comput..

[13]  Victor Moroz,et al.  The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits , 2016 .