A Fully-Integrated Dual-Band Concurrent CMOS LNA for 2.45/5.25 GHz Applications

This paper presents a fully-integrated dual-band concurrent CMOS low noise amplifier (LNA) which is implemented in Global Foundries 0.13 um RF CMOS technology. The LNA is designed to receive signals at 2.45 and 5.25 GHz frequency bands simultaneously. The concurrent operation of the proposed LNA makes it suitable for WLAN (802.11 b/g/a) applications. Based on post layout simulation results, this design achieved the power gain of 16 dB at 2.45 GHz and 11.7 dB at 5.25 GHz, the NF of 3 dB at 2.45 GHz and 4.3 dB at 5.25 GHz and the input and output return loss of −14 dB at the desired frequencies. Total power consumption of this design is only 6.5 mW.

[1]  Hossein Hashemi,et al.  Concurrent multiband low-noise amplifiers-theory, design, and applications , 2002 .

[2]  Sambit Datta,et al.  Fully Concurrent Dual-Band LNA Operating in 900 MHz/2.4 GHz Bands for Multi-standard Wireless Receiver with Sub-2dB Noise Figure , 2010, 2010 3rd International Conference on Emerging Trends in Engineering and Technology.

[3]  Jean-Baptiste Begueret,et al.  Concurrent Dual-Band Low Noise Amplifier for 802.11a/g WLAN applications , 2006, 2006 13th IEEE International Conference on Electronics, Circuits and Systems.

[4]  Ashudeb Dutta,et al.  A gain boosted fully concurrent dual-band interstage matched LNA operating in 900 MHz/2.4 GHz with sub-2dB Noise Figure , 2010, 2010 INTERNATIONAL CONFERENCE ON COMMUNICATION CONTROL AND COMPUTING TECHNOLOGIES.

[5]  Jeng-Rern Yang,et al.  A concurrent multi-band low-noise amplifier for WLAN/WiMAX applications , 2008, 2008 IEEE International Conference on Electro/Information Technology.