DUV synchrotron exposure station at CAMD

A new synchrotron radiation exposure station dedicated to deep-UV exposures has been installed at the synchrotron light source at the Center for Advanced Microstructures and Devices (CAMD). It complements the activities in synchrotron-based lithography including X-ray lithography, deep X-ray lithography, and under way, ultra-deep X-ray lithography. The UV station branches out of the X-ray lithography beamline. A retractable Si mirror reflects the incoming synchrotron radiation beam by 90 deg through a CaF2 window. Three insertable bandpass filters allow the selection of broad-band transmission spectra around the wavelengths of two excimer lasers at 248 nm (KrF) and 193 nm (ArF), and at a shorter wavelength of 187 nm. The station allows for exposures under vacuum or in an inert gas atmosphere.