The chemisorption of indium on a clean silicon (111) surface has been investigated with display‐type low‐energy electron diffraction (LEED) equipment. Eight two‐dimensional phases have been observed. They vary with respect to composition (from one‐third to one monolayer) and with respect to dependence on thermal history. Transitions observed in the range between room temperature and several hundred °C occur with change in adsorbate concentration and reconstruction of adsorbate atom configuration, but transitions at much higher temperatures are probably accompanied by reconstruction of the adsorbing silicon atom configuration.It is noted that LEED provides specific means for determining composition. Combination of this information with the observed translational symmetry of a surface structure, the principle of bond saturation, and a choice of adsorbate sites of maximum symmetry makes the number of likely structures small for the simpler phases. Diffraction intensity data have been, for the most part, negl...
[1]
J. J. Lander,et al.
Low‐Energy Electron Diffraction Study of Graphite
,
1964
.
[2]
E. A. Wood,et al.
Vocabulary of Surface Crystallography
,
1964
.
[3]
J. J. Lander,et al.
Structural Properties of Cleaved Silicon and Germanium Surfaces
,
1963
.
[4]
J. J. Lander,et al.
Low‐Energy Electron Diffraction Study of Silicon Surface Structures
,
1962
.
[5]
J. J. Lander,et al.
Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon
,
1962
.
[6]
F. G. Allen.
Field emission from silicon and germanium; field desorption and surface migration
,
1961
.