The growth of Si on Si(100): a video-LEEM study

[1]  M. Lagally,et al.  Anisotropy in surface migration of Si and Ge on Si(001) , 1991 .

[2]  M. Lagally,et al.  Domain boundary control of edge roughness in vicinal Si(001) , 1991 .

[3]  Poon,et al.  Equilibrium structures of Si(100) stepped surfaces. , 1990, Physical review letters.

[4]  Webb,et al.  Direct determination of step and kink energies on vicinal Si(001). , 1990, Physical review letters.

[5]  Hamers,et al.  Finite-temperature phase diagram of vicinal Si(100) surfaces. , 1990, Physical review letters.

[6]  E. Bauer,et al.  Atomic steps on Si{100} and step dynamics during sublimation studied by low-energy electron microscopy , 1989 .

[7]  Dieleman,et al.  Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxy. , 1989, Physical review letters.

[8]  K. Yagi,et al.  The effect of surface anisotropy of Si(001)2 × 1 on hollow formation in the initial stage of oxidation as studied by reflection electron microscopy , 1989 .

[9]  R. Hamers,et al.  Nucleation and growth of epitaxial silicon on Si(001) and Si(111) surfaces by scanning tunneling microscopy , 1989 .

[10]  M. Lagally,et al.  Ordering kinetics at surfaces , 1989 .

[11]  M. Ichikawa,et al.  Microscopic observation of Si MBE on Si(001) surface using microprobe RHEED , 1989 .

[12]  Webb,et al.  Si(100) surface under an externally applied stress. , 1988, Physical review letters.

[13]  D. Vanderbilt,et al.  Spontaneous formation of stress domains on crystal surfaces. , 1988, Physical review letters.

[14]  Wierenga,et al.  Tunneling images of biatomic steps on Si(001). , 1987, Physical review letters.

[15]  Chadi Dj,et al.  Stabilities of single-layer and bilayer steps on Si(001) surfaces. , 1987 .

[16]  Ihm,et al.  Biatomic steps on (001) silicon surfaces. , 1986, Physical review letters.

[17]  Ralf Vanselow,et al.  Chemistry and physics of solid surfaces , 1982 .