Semiconductors at cryogenic temperatures
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[1] J. Rowell,et al. Hot Carriers in Germanium , 1960 .
[2] H. Vink,et al. Investigations on Silicon Carbide , 1961 .
[3] W. J. Choyke,et al. Impurity Bands and Electroluminescence in SiC p‐n Junctions , 1959 .
[4] Direct Observation of Polarons and Phonons During Tunneling in Group 3-5 Semiconductor Junctions , 1960 .
[5] R. Phelan,et al. Negative Resistance and Impact Ionization Impurities in n-Type Indium Antimonide , 1964 .
[6] A. R. Tretola,et al. GaAs p‐n Junction Diodes for Wide Range Thermometry , 1963 .
[7] C. A. Bryant,et al. Low-Temperature Specific Heat of Germanium , 1961 .
[8] Recombination in Semiconductors , 1958, Proceedings of the IRE.
[9] J. W. Granville,et al. A study of energy-loss processes in germanium at high electric fields using microwave techniques , 1961 .
[10] E H Putley,et al. Electrical Conduction in n-Type InSb between 2°k and 300°k , 1959 .
[11] A. Jonscher. Measurement of Voltage-Current Characteristics of Junction Diodes at High Forward Bias , 1958 .
[12] L. M. Lambert. Impact ionization of impurities in heavily compensated germanium , 1962 .
[13] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[14] M. Glicksman,et al. Hot Electrons in Indium Antimonide , 1963 .
[15] A. L. McWhorter,et al. Compound cryosars for low-temperature computer memories , 1961 .
[16] A. L. McWhorter,et al. The Cryosar-A New Low-Temperature Computer Component , 1959, Proceedings of the IRE.
[17] S. Koenig. Hot and warm electrons — A review , 1959 .
[18] M. E. Moncaster,et al. Electroluminescent devices using carrier injection in gallium phosphide , 1963 .
[19] Melvin Lax,et al. Cascade Capture of Electrons in Solids , 1960 .
[20] A. Rose. Recombination Processes in Insulators and Semiconductors , 1955 .
[21] A. Jonscher. p-n junctions at very low temperatures , 1961 .
[22] Transport of hot injected plasmas in semiconductors , 1964 .
[23] E H Putley,et al. The Electrical Conductivity and Hall Effect of Silicon , 1958 .
[24] The effect of temperature on the properties of GaAs laser , 1963 .
[25] W. Engeler,et al. Temperature Effects in Coherent GaAs Diodes , 1963 .
[26] E. H. Putley,et al. The detection of sub-mm radiation , 1963 .
[27] R. Mikulyak,et al. Electroluminescence at p‐n Junctions in Gallium Phosphide , 1961 .
[28] J. A. Morrison,et al. The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectra , 1959 .
[29] R. Newman,et al. Photoconductivity in Germanium , 1959 .
[30] S. H. Koenig,et al. Electrical Conduction in n-Type Germanium at Low Temperatures , 1962 .
[31] A. Zylbersztejn. Impact ionization in zinc-doped germanium at low temperatures , 1962 .
[32] H. Grimmeiss,et al. Analysis ofp−nLuminescence in Zn-Doped GaP , 1961 .
[33] R. Pratt,et al. Hot electrons and negative resistance at 20°K In n-type germanium containing Au− centres , 1964 .
[34] R. Pratt,et al. The capture of thermal electrons by gold centres in N-type germanium at 20°K , 1964 .
[35] M. Steele,et al. Plasma effects in solids , 1964 .
[36] A. Foyt. A proposed UHF transistor using an electroluminescent emitter and a collector-base heterojunction , 1963 .
[37] R. A. Logan,et al. Excess Tunnel Current in Silicon Esaki Junctions , 1961 .
[38] E. Paige,et al. A theory of the effects of carrier-carrier scattering on mobility in semiconductors , 1960 .
[39] E. Conwell,et al. Electrical Properties of N -Type Germanium , 1954 .
[40] E. Paige. The drift mobility of electrons and holes in germanium at low temperatures , 1960 .
[41] Carrier Lifetime in Indium Antimonide , 1956 .
[42] P. H. Keesom,et al. The Atomic Heat of Silicon below 100°K , 1952 .
[43] W. Shockley,et al. Photon-Radiative Recombination of Electrons and Holes in Germanium , 1954 .
[44] B. Lax,et al. High speed heterojunction photodiodes and beam-of-light transistors , 1963 .
[45] A. Jonscher. Solid state plasma phenomena , 1964 .
[46] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .
[47] J. Ziman,et al. The thermal conductivity of germanium and silicon between 2 an d 300° K , 1957, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[48] G. Swartz. Low-temperature hall coefficient and conductivity in heavily doped silicon , 1960 .
[49] E. Abrahams,et al. Impurity Conduction at Low Concentrations , 1960 .
[50] William Shockley,et al. Electrons, Holes, and Traps , 1958, Proceedings of the IRE.
[51] P. Landsberg,et al. Auger effect in semiconductors , 1959, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[52] H. Fritzsche,et al. Impurity Conduction in Transmutation-Doped p -Type Germanium , 1960 .
[53] D. A. Jenny,et al. The Status of Transistor Research in Compound Semiconductors , 1958, Proceedings of the IRE.