Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors
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[1] H. Osten,et al. Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing , 2001 .
[2] E. Cartier,et al. Characterization of silicate/Si(001) interfaces , 2002 .
[3] K. Barmak,et al. A new model for grain boundary diffusion and nucleation in thin film reactions , 1994 .
[4] H. Anderson,et al. Raman Spectroscopy of Nanocrystalline Ceria and Zirconia Thin Films , 2004 .
[5] A. Kingon,et al. Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures , 2002 .
[6] Toshinori Mori,et al. Specific Adsorption Behavior of Water on a Y2O3 Surface , 2000 .
[7] Yet-Ming Chiang,et al. Nonstoichiometry and Electrical Conductivity of Nanocrystalline CeO $${2 - x} $$ , 1997 .
[8] M. Heyns,et al. Crystallisation and Tetragonal-Monoclinic Transformation in ZrO2 and HfO2 Dielectric Thin Films , 2001 .
[9] Donald R. Olander,et al. Thermochemistry of the U-O and Zr-O systems , 1993 .
[10] Reaction steps of silicidation in ZrO2/SiO2/Si layered structure , 2002 .
[11] K. Saraswat,et al. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition , 2001 .
[12] N. M. Tallan,et al. Electrical Properties and Defect Structure of Y2O3 , 1966 .
[13] Carlos G. Levi,et al. Application of Metastable Phase Diagrams to Silicate Thin Films for Alternative Gate Dielectrics , 2003 .
[14] A. Toriumi,et al. Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure , 2002 .
[15] Dmitri O. Klenov,et al. Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers , 2002 .
[16] A. Heuer,et al. Solid-state diffusive amorphization in TiO2/ZrO2 bilayers , 1996 .
[17] V. Narayanan,et al. Lattice-matched, epitaxial, silicon-insulating lanthanum yttrium oxide heterostructures , 2002 .
[18] John Wang,et al. Hafnia and hafnia-toughened ceramics , 1992, Journal of Materials Science.
[19] Douglas A. Buchanan,et al. Interface reactions in ZrO2 based gate dielectric stacks , 2002 .
[20] H. Seifert,et al. Phase equilibria and thermodynamics in the Y2O3-Al2O3-SO2- system , 2001 .
[21] Jane P. Chang,et al. Thermal stability of stacked high-k dielectrics on silicon , 2001 .
[22] Dim-Lee Kwong,et al. Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100) , 2001 .
[23] A. Kingon,et al. Structure and stability of La2O3/SiO2 layers on Si(001) , 2001 .
[24] K. Saraswat,et al. Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics , 2002 .
[25] C. Wiemer,et al. High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces , 2002 .
[26] R. Garvie. THE OCCURRENCE OF METASTABLE TETRAGONAL ZIRCONIA AS A CRYSTALLITE SIZE EFFECT , 1965 .
[27] G. Wilk,et al. Thermal decomposition behavior of the HfO2/SiO2/Si system , 2003 .
[28] H. Oonk,et al. Liquid immiscibility in the SiO2+MgO, SiO2+SnO, SiO2+La2O3, and SiO2+Y2O3 systems , 1986 .
[29] Howard R. Huff,et al. Physicochemical properties of HfO2 in response to rapid thermal anneal , 2003 .
[30] J. J. Lander,et al. Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon , 1962 .
[31] Evgeni P. Gusev,et al. Structure and stability of ultrathin zirconium oxide layers on Si(001) , 2000 .
[32] Structure and thermal stability of MOCVD ZrO2 films on Si (100) , 2003 .
[33] Piero Pianetta,et al. Interfacial properties of ZrO2 on silicon , 2003 .
[34] E. Garfunkel,et al. Oxygen exchange and transport in thin zirconia films on Si(100) , 2000 .
[35] G. Ghidini,et al. Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2 , 1982 .
[36] M. Copel. Selective desorption of interfacial SiO2 , 2003 .
[37] David A. Muller,et al. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si , 2001 .
[38] S. Stemmer,et al. Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon , 2002 .
[39] J. White,et al. Interfacial silicon oxide formation during synthesis of ZrO2 on Si(100) , 2000 .
[40] W. Johnson,et al. Dominant moving species in the formation of amorphous NiZr by solid‐state reaction , 1985 .
[41] G. Thomas,et al. Zircon formation from amorphous silica and tetragonal zirconia: kinetic study and modelling , 2001 .
[42] S. Campbell,et al. Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates , 2001 .
[43] D. Starodub,et al. SILICON OXIDE DECOMPOSITION AND DESORPTION DURING THE THERMAL OXIDATION OF SILICON , 1999 .
[44] D. Schlom,et al. Thermodynamic stability of binary oxides in contact With silicon , 1996 .
[45] Raghaw Rai,et al. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 , 2002 .
[46] H. Schaefer,et al. OXYGEN DIFFUSION IN ULTRAFINE GRAINED MONOCLINIC ZRO2 , 1999 .
[47] Ji-Cheng Zhao,et al. Hf-Si binary phase diagram determination and thermodynamic modeling , 2000 .
[48] J. Lettieri,et al. Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon , 2002 .
[49] Olivier Renault,et al. HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy , 2002 .
[50] G. Botton,et al. Electron energy loss spectroscopy of interfacial layer formation in Gd2O3 films deposited directly on Si(001) , 2002 .
[51] J. Kwo,et al. Interface reactions of high-κ Y2O3 gate oxides with Si , 2001 .
[52] J. Park,et al. Thermodynamic modeling of the miscibility gaps and the metastability in the R2O3–SiO2 systems (R=La, Sm, Dy, and Er) , 2001 .
[53] Angus I. Kingon,et al. High temperature stability in lanthanum and zirconia-based gate dielectrics , 2001 .
[54] Gregory N. Parsons,et al. Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon , 2002 .